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| NPN Silicon AF Transistors BCX 54 ... BCX 56 Features For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCX 51 ... BCX 53 (PNP) q Type BCX 54 BCX 54-10 BCX 54-16 BCX 55 BCX 55-10 BCX 55-16 BCX 56 BCX 56-10 BCX 56-16 Marking BA BC BD BE BG BM BH BK BL Ordering Code (tape and reel) Q62702-C954 Q62702-C1861 Q62702-C1731 Q62702-C1729 Q62702-C1730 Q62702-C1903 Q62702-C1614 Q62702-C1635 Q62702-C1613 Pin Configuration 1 2 3 B C E Package1) SOT-89 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 04.96 BCX 54 ... BCX 56 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS Symbol BCX 54 VCE0 VCB0 VEB0 IC ICM IB IBM Tj Tstg 45 45 5 Values BCX 55 60 60 5 1 1.5 100 200 1 150 Unit BCX 56 80 100 5 A mA W C V Total power dissipation, TS = 130 C Ptot - 65 ... + 150 75 20 K/W 1) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCX 54 ... BCX 56 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCX 54 BCX 55 BCX 56 Collector-base breakdown voltage IC = 100 A BCX 54 BCX 55 BCX 56 Emitter-base breakdown voltage IE = 10 A Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 C Emitter cutoff current VEB = 4 V DC current gain1) IC = 5 mA, VCE = 2 V IC = 150 mA, VCE = 2 V BCX 54, BCX 55, BCX 56 BCX 54-10, BCX 55-10, BCX 56-10 BCX 54-16, BCX 55-16, BCX 56-16 IC = 500 mA, VCE = 2 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter voltage1) IC = 500 mA, VCE = 2 V AC characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 20 MHz fT - 100 - MHz V(BR)CE0 45 60 80 V(BR)CB0 45 60 100 V(BR)EB0 ICB0 - - IEB0 hFE 25 40 63 100 25 VCEsat VBE - - - - 100 160 - - - - 250 160 250 - 0.5 1 V - - - - 100 20 20 nA A Values typ. max. Unit V - - - - - - - - - - - - - - 5 nA - 1) Pulse test: t 300 s, D = 2 %. Semiconductor Group 3 BCX 54 ... BCX 56 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 10 V Permissible pulse load Ptot max/Ptot DC = f (tp) Collector cutoff current ICB0 = f (TA) VCB = 30 V Semiconductor Group 4 BCX 54 ... BCX 56 Collector current IC = f (VBE) VCE = 2 V Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 DC current gain hFE = f (IC) VCE = 2 V Semiconductor Group 5 |
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